France Feb. 8, 2011 Altatech Semiconductor S.A. the Fraunhofer Research Institution for Modular Solid State Technology EMFT Munich, Germany 200-mm AltaCVD
The AltaCVD platform’s flexible architecture allows it to be used for sub-atmospheric-pressure deposition (SACVD) of ultrathin conformal isolation layers inside deep vias and trenches with aspect ratios as high as 40:1. When used in plasma-enhanced deposition (PECVD) mode, the system can create doped silicon-oxide films used in planarizing advanced CMOS structures. All process steps run at low temperatures between 150 degrees C and 430 degrees C to reduce thermal stresses and improve yields.
About Fraunhofer EMFT
Munich Munich July 1, 2010
About Altatech Semiconductor S.A.
SOURCE Altatech Semiconductor S.A.