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Altatech Semiconductor Receives CVD Equipment Order from Fraunhofer Research Center in Munich

France Feb. 8, 2011 Altatech Semiconductor S.A. the Fraunhofer Research Institution for Modular Solid State Technology EMFT Munich, Germany 200-mm AltaCVD

The AltaCVD platform’s flexible architecture allows it to be used for sub-atmospheric-pressure deposition (SACVD) of ultrathin conformal isolation layers inside deep vias and trenches with aspect ratios as high as 40:1. When used in plasma-enhanced deposition (PECVD) mode, the system can create doped silicon-oxide films used in planarizing advanced CMOS structures. All process steps run at low temperatures between 150 degrees C and 430 degrees C to reduce thermal stresses and improve yields.

AltaCVD 200


About Fraunhofer EMFT

Munich Munich July 1, 2010

About Altatech Semiconductor S.A.


SOURCE Altatech Semiconductor S.A.

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