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D2S and NuFlare Partner to Reduce Write Times for Complex 22-nm Photomasks

SAN JOSE, Calif. March 1, 2011

Currently, NuFlare VSB systems do not control the dose on a per-VSB-shape basis.  By combining the dose control option with the D2S option, the D2S design for e-beam (DFEB) mask technology can take advantage of per-shot dose control.  With D2S DFEB mask technology, NuFlare’s EBM-7000 and next-generation systems will be able to write complex mask patterns in acceptable write times—improving wafer yield while reducing the overall manufacturing cost of complex 22-nm photomasks.  This partnership demonstrates the continued adoption and support for DFEB mask technology to further extend optical lithography to the 22-nm node.  

Complex sub-resolution assist features (SRAFs) on photomasks aid in producing higher depth of focus, which is critical for wafer yield at the 22-nm node.  Higher mask costs result from increased shot counts and limit the usage of complex SRAFs.  D2S and NuFlare worked together to create a new interface and enhance the EBM-7000 and next-generation systems to accept overlapping shots.  As a result, when using the D2S option, the NuFlare system’s VSB-12 reader accepts overlapping shots.  

In addition to improved write times, the overlapping shot technique leads to better critical dimension uniformity on the mask, particularly for small SRAFs less than 80 nm in width, which in turn leads to better uniformity on the wafer, and can result in higher wafer yield.

Hirokazu Yamada

Aki Fujimura

Wednesday, March 2 Aki Fujimura Tuesday, March 1 February 27-March 3 San Jose San Jose, Calif.

About NuFlare Technology, Inc.

Japan USA Germany Taiwan JPY 20 billion www.nuflare.co.jp

About D 2 S, Inc.

San Jose, Calif. www.design2silicon.com

D2S™ is a trademark of D2S, Inc.

SOURCE D2S

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