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Open-Silicon Releases MAX Technologies 2.0

MILPITAS, Calif. Feb. 15, 2011 Open-Silicon, Inc. MAX Technologies 2.0 PowerMAX CoreMAX TestMAX VariMAX

For managing silicon variability and reducing leakage power, Open-Silicon offers VariMAX with back biasing.  Open-Silicon’s 28nm development efforts have shown back biasing to be effective at dramatically reducing leakage power even with new high-K metal gate (HKMG) transistors.  As low-power design moves to the mainstream, back biasing is becoming a critical technology for maximizing yields for high-volume mobile SoCs and managing power density for high-performance networking and computing silicon.  

Open-Silicon offers PowerMAX for low-power design.  In particular, Multi-Threshold CMOS (MTCMOS) has been used in many designs across multiple foundries. With MTCMOS, Open-Silicon has efficiently implemented block-level power gating using either header or footer cells as well as memory retention, state retention flops, level shifters, isolation cells and rush current analysis.

Think Physical

design-lite model Colin Baldwin

About Open-Silicon, Inc.

SOURCE Open-Silicon, Inc.

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