BARCELONA, Spain Feb. 14, 2011
RFMD’s RF724x power amplifiers support ultra-high peak efficiency of 48%-51%, significantly above current competitive offerings. Additionally, when combined with one of RFMD’s companion DC-DC converters or with chipsets featuring on-chip DC-DC converter functionality, RFMD’s RF724x power amplifiers can deliver best-in-class DG.09 performance as low as 13 mA – directly translating into superior 3G talk time. RFMD’s RF724x product family is comprised of five PAs covering WCDMA bands 1, 2, 4, 5 and 8, addressing the most common 3G/4G frequency bands and band combinations.
All RF724x power amplifiers are packaged in a standardized 3×3 mm footprint, significantly improving smartphone platform flexibility and ease of implementation. RFMD’s RF724x power amplifiers also feature an integrated high directivity coupler, standard 2-bit GPIO control logic, and low insertion phase shift between bias states.
RFMD offers a broad portfolio of 3G solutions in single-mode and multimode converged and hybrid architectures to ensure compatibility with leading chipset providers and enable global platform manufacturing.
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world’s leading mobile device, customer premises and communications equipment providers.
Greensboro, N.C. www.rfmd.com
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SOURCE RF Micro Devices, Inc.