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Synopsys and Varian Collaborate on Process Models for Advanced Logic and Memory Technologies

MOUNTAIN VIEW, Calif. GLOUCESTER, Mass. Feb. 10, 2011

Ion implantation forms transistor structures in semiconductor silicon through energetic ion beams. These ions disrupt the crystal structure of the silicon, creating end-of-range damage that impacts device performance as devices shrink. To neutralize the damage, Varian’s latest generation of high current implanters enables the ion implantation process to occur at reduced wafer temperature (cryogenic implant), resulting in significant reduction of end-of-range damage, minimizing device leakage and widening process margins.

Yuri Erokhin

Through this collaboration, Synopsys will use experimental data from Varian’s cryogenic implant process to develop and calibrate models for its TCAD Sentaurus tools, which are widely used by semiconductor companies in the development and optimization of new manufacturing technologies.

Howard Ko

About Synopsys

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About Varian Semiconductor

Gloucester, Massachusetts

Forward Looking Statements

October 31, 2010

Synopsys is a registered trademark of Synopsys, Inc. Any other trademarks or registered trademarks mentioned in this release are the intellectual property of their respective owners.

Editorial Contacts:

Sheryl Gulizia

Bob Halliday

Synopsys, Inc.

Executive Vice President and CFO


Varian Semiconductor Equipment Associates

[email protected]


Lisa Gillette-Martin

Tom Baker

MCA, Inc.

Vice President, Finance

650-968-8900 x115

Varian Semiconductor Equipment Associates

[email protected]


SOURCE Synopsys, Inc.

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