OTTAWA, Ontario Jan. 28, 2011
UBM TechInsights’ analysis reveals that this new Samsung DRAM features double the memory density with only a 20% increase in die size over the previous generation. The 2Gbit die, labeled K4B2G0846D, revealed a measurement of 36mm2 as compared to the previous 1 Gbit die at the 48nm process node, which featured a measurement of 30mm2.
UBM TechInsights’ leading-edge forensic technical analysis techniques, combined with years of experience in all aspects of the IP / Technology Lifecycle, enable the discovery and analysis of advanced devices such as Samsung’s DDR3 DRAM.
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SOURCE UBM TechInsights